Chen Li Source Confirmed

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Federal Grant PI

Researcher

University of Arkansas at Fayetteville

faculty

12 h-index 52 pubs 456 cited

Research Areas

GaN-based semiconductor devices and materials Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design Metal and Thin Film Mechanics Fluid Dynamics and Turbulent Flows Nanoparticles: synthesis and applications

Links

ORCID

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OverviewAI-generated summary

Chen Li's research focuses on the growth and characterization of semiconductor materials, particularly germanium and related alloys, using molecular beam epitaxy (MBE). His work investigates methods to control strain, composition, and carrier properties in these materials to enable advanced electronic and optoelectronic devices. Recent publications include studies on composition-graded electron-blocking layers in deep-ultraviolet light-emitting diodes, the growth of germanium and GeSn alloys on GaAs by MBE, and strain-mediated Sn incorporation in GeSn epilayers. Li has also explored annealing-induced carrier activation and photoluminescence enhancement in Ge-on-Si grown by low-temperature MBE, as well as the tunable bandgaps of InAs/AlAs superlattices.

Li's research has been supported by federal grants from agencies including the National Institutes of Health (NIH) and the National Science Foundation (NSF). He served as Co-PI on an NIH grant totaling $328,030 for research on tunable multi-timescale cortical dynamics, and as PI on an NSF grant for $210,000 focused on robust and efficient high-order algorithms for fluid dynamics simulations. With an h-index of 12 and 456 citations across 52 publications, Li is an active researcher in the field of semiconductor materials science and its applications.

Metrics

  • h-index: 12
  • Publications: 52
  • Citations: 456

Selected Publications

  • Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer (2024) DOI
  • The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy (2024) DOI
  • Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy (2023) DOI
  • Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures (2023) DOI
  • Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film (2023) DOI
  • Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells (2022) DOI

Federal Grants 2 $538,030 total

NIH/National Institute on Drug Abuse Co-PI Aug 2024 - May 2027

Tunable multi-timescale cortical dynamics: fundamental theory and practical tools

National Institute on Drug Abuse $328,030 R01
NSF PI

Robust and efficient high-order algorithms for fluid dynamics simulations: structure-preserving methods and optimization-based limiters

OFFICE OF MULTIDISCIPLINARY AC, COMPUTATIONAL MATHEMATICS $210,000

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