Satish Shetty Source Confirmed

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Researcher

University of Arkansas at Fayetteville

faculty

satishshettymn@gmail.com

8 h-index 32 pubs 279 cited

Research Areas

Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design Nanoparticles: synthesis and applications GaN-based semiconductor devices and materials Metal and Thin Film Mechanics

Links

ORCID Lab Website

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OverviewAI-generated summary

Satish Shetty's research investigates semiconductor materials and devices, with a focus on gallium nitride (GaN)-based Hall-effect sensors. His work has explored the temperature, sensitivity, and frequency response of AlN/GaN heterostructure micro-Hall effect sensors, as well as the thermal stability and high-temperature degradation modes observed in these devices. Shetty has also examined novel micro-AlN/GaN/AlN quantum well Hall sensors and their sensitivity. His publications also include work on strain-mediated Sn incorporation in GeSn epilayers and green synthesis of hydroxyapatite nanocomposites for biomedical and environmental applications. Shetty has a total of 32 publications and a h-index of 8, with 279 citations. He has collaborated with several researchers at the University of Arkansas at Fayetteville, including Yuriy I. Mazur, Ayesha Hassan, Oluwatobi Olorunsola, and Fernando Maia de Oliveira.

Metrics

  • h-index: 8
  • Publications: 32
  • Citations: 279

Selected Publications

  • Trade-off between Hall sensitivity, temperature stability, and frequency response in a 2DEG nitride Hall-effect sensor (2026) DOI
  • Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors (2024) DOI
  • Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer (2024) DOI
  • Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor (2024) DOI
  • A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor (2024) DOI
  • Sensitivity of Novel Micro-AlN/GaN/AlN Quantum Well Hall Sensors (2024) DOI
  • Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures (2023) DOI
  • Thermal stability study of gallium nitride based magnetic field sensor (2023) DOI
  • A Fast Interface Circuit Using Multiple Signal Paths for High Bandwidth Hall Sensors (2022) DOI
  • High Temperature Degradation Modes Observed in Gallium Nitride-Based Hall-Effect Sensors (2022) DOI

Collaborators

Researchers in the database who share publications

Yuriy I. Mazur University of Arkansas at Fayetteville 6 shared publications Ayesha Hassan University of Arkansas at Fayetteville 5 shared publications Oluwatobi Olorunsola University of Arkansas at Fayetteville 4 shared publications Fernando Maia de Oliveira University of Arkansas at Fayetteville 4 shared publications Mohammad Zamani‐Alavijeh University of Arkansas at Fayetteville 3 shared publications Alexis Krone University of Arkansas at Fayetteville 3 shared publications Dinesh Baral University of Arkansas at Fayetteville 3 shared publications David Huitink University of Arkansas at Fayetteville 2 shared publications

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