Abu Shahir Md Khalid Hasan Source Confirmed

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Graduate Research Assistant

University of Arkansas at Fayetteville

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4 h-index 22 pubs 77 cited

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Biography and Research Information

OverviewAI-generated summary

Abu Shahir Md Khalid Hasan is a researcher investigating semiconductor materials and devices, with a focus on wide-bandgap semiconductors like silicon carbide (SiC) and gallium nitride (GaN). His work involves studying the performance and modeling of power modules and transistors under various environmental conditions, including high temperatures and cryogenic temperatures. Hasan has published research on SiC CMOS technology for harsh environments, low-inductance SiC power modules, and physics-based compact models for SiC MOSFETs that incorporate temperature scaling. His investigations also extend to single event upsets in Gallium Oxide MOSFETs and deep cryogenic characterization of GaN HEMTs. Hasan collaborates with researchers at the University of Arkansas at Fayetteville, including Md Maksudul Hossain and Mohammad Dehan Rahman, and has a publication record of 22 papers with 77 citations, and an h-index of 4.

Metrics

  • h-index: 4
  • Publications: 22
  • Citations: 77

Selected Publications

  • A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability (2026) DOI
  • SEU Effect in E-Mode β-Ga <sub>2</sub> О <sub>3</sub> MOSFET with Epitaxial Drift Layer at the Breakdown Region (2025) DOI
  • Design and Evaluation of a 650 V, 300 A GaN-Based Power Module with Integrated Drivers and Ultra-Low Inductance Layout (2025) DOI
  • Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module (2025) DOI
  • Compact Modeling of <i>β</i> -Ga <sub>2</sub> O <sub>3</sub> Lateral Depletion Mode MOSFET (2025) DOI
  • Compact Model for a Ferroelectric Capacitor Compatible with Integrated Circuit Design in Harsh Environment (2025) DOI
  • Breakdown and C-V Characteristics Analysis of Depletion Mode Lateral β-Ga<sub>2</sub>O<sub>3</sub> MOSFET (2025) DOI
  • Compact Model of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode (2025) DOI
  • Design of Low Parasitic Inductance GaN HEMT Flip-Chip Power Module (2025) DOI
  • A 0.8 V Bandgap Voltage Reference with High PSRR for Low-Dropout Voltage Regulator in 22nm FD-SOI (2024) DOI
  • High Temperature Characterization and Degradation Test of a Cascode Gallium Nitride Field Effect Transistor (2024) DOI
  • Temperature Scaling and <i>C–V</i> Modeling of SiC Low-Voltage MOSFETs for IC Design (2024) DOI
  • Impact of 6.5-kV SiC MOSFET Gate Bias on Reverse Recovery Over a Wide Temperature Range (2024) DOI
  • Single Event Upset in Depletion-Mode Gallium Oxide MOSFETs at the Breakdown Region (2024) DOI
  • A review of silicon carbide CMOS technology for harsh environments (2024) DOI

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