Silicon Carbide Semiconductor Technologies

Research in silicon carbide semiconductor technologies focuses on developing and characterizing advanced materials and devices for high-power, high-frequency, and high-temperature applications. Investigations include the fundamental properties of silicon carbide substrates and epitaxial layers, the design and fabrication of power diodes, transistors, and integrated circuits, and the reliability and packaging of these components. Specific areas of study encompass defect control in silicon carbide crystals, novel device architectures for improved performance, and the integration of silicon carbide devices into power electronic systems.

This work holds particular relevance for Arkansas's growing advanced manufacturing sector, contributing to the development of more efficient and robust power electronics essential for electric vehicles, renewable energy systems, and industrial automation. The state's strategic location and existing industrial base provide opportunities for collaboration and commercialization of these advanced semiconductor technologies. Furthermore, improvements in power conversion efficiency enabled by silicon carbide can support energy conservation efforts across various sectors within the state.

This research area involves expertise in materials science, electrical engineering, and device physics. It connects to broader work in semiconductor materials and devices, power electronics, and photonic and optical devices. Engagement spans multiple institutions across Arkansas, fostering interdisciplinary collaboration and training the next generation of semiconductor researchers and engineers.