Manal A. Aldawsari Source Confirmed
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Researcher
University of Arkansas at Fayetteville
unknown
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Biography and Research Information
OverviewAI-generated summary
Manal A. Aldawsari's research focuses on the modeling and simulation of semiconductor materials, specifically InGaN-based solar cells. Her work investigates the temperature dependence of these devices, considering both strained and relaxed features within graded InGaN structures. Aldawsari has published on the comparison of strained and relaxed features in Λ-graded InxGa1−xN solar cells and the simulation of double-graded InGaN solar cell structures. Additionally, her research includes the study of how the number of wells in periodic InGaN graded structures affects their optical properties, with comparisons between experimental results and simulations for luminescence properties of GaN/InGaN/GaN double graded structures. Aldawsari has a h-index of 3 and has published 7 total publications, which have been cited 18 times. She frequently collaborates with researchers at the University of Arkansas at Fayetteville, including Reem Alhelais, Morgan E. Ware, Rohith Allaparthi, and Md Helal Uddin Maruf.
Metrics
- h-index: 3
- Publications: 7
- Citations: 18
Selected Publications
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features (2022) DOI
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features (2022) DOI
- Study of simulations of double graded InGaN solar cell structures (2022) DOI
- Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures (2021) DOI
- Effects of numbers of wells on optical properties of periodic InGaN graded structure (2021) DOI
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