Mohammad Zamani‐Alavijeh Source Confirmed

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Researcher

University of Arkansas at Fayetteville

faculty

6 h-index 22 pubs 89 cited

Research Areas

Semiconductor materials and devices Photonic and Optical Devices Advancements in Semiconductor Devices and Circuit Design Nanoparticles: synthesis and applications Metal and Thin Film Mechanics

Links

ORCID Lab Website

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OverviewAI-generated summary

Mohammad Zamani‐Alavijeh's research focuses on the optical, structural, and electronic properties of semiconductor materials for optoelectronic applications. His work has investigated heterojunctions, such as those involving β-Ga2O3 and AlGa2O3, and the growth of germanium and GeSn alloys on GaAs substrates using molecular beam epitaxy. He has also studied multiple quantum wells for infrared optoelectronics and the thermal stability of gallium nitride-based magnetic field sensors.

Zamani‐Alavijeh has explored the role of dislocations on tin diffusion in GeSn layers and examined the nonlinear optical properties of nickel nano-films. Additionally, his research includes modeling the temperature dependence of InGaN solar cells, considering both strained and relaxed features, as well as simulating double-graded InGaN solar cell structures. He has a publication record of 22 papers, with an h-index of 6 and 89 total citations. He frequently collaborates with researchers at the University of Arkansas at Fayetteville, including Yuriy I. Mazur, Fernando Maia de Oliveira, Oluwatobi Olorunsola, and Hryhorii Stanchu.

Metrics

  • h-index: 6
  • Publications: 22
  • Citations: 89

Selected Publications

  • Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025) DOI
  • High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam (2024) DOI
  • Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors (2024) DOI
  • Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer (2024) DOI
  • Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy (2024) DOI
  • The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire (2024) DOI
  • The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy (2024) DOI
  • Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy (2023) DOI
  • Thermal stability study of gallium nitride based magnetic field sensor (2023) DOI
  • Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers (2023) DOI
  • Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features (2022) DOI
  • Band Offsets of the MOCVD-Grown β-(Al<sub>0.21</sub>Ga<sub>0.79</sub>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> (010) Heterojunction (2022) DOI
  • The Growth of Polarization Domains in Ultrathin Ferroelectric Films Seeded by the Tip of an Atomic Force Microscope (2022) DOI
  • Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics (2022) DOI
  • Study of simulations of double graded InGaN solar cell structures (2022) DOI

Collaborators

Researchers in the database who share publications

Yuriy I. Mazur University of Arkansas at Fayetteville 13 shared publications Fernando Maia de Oliveira University of Arkansas at Fayetteville 11 shared publications Oluwatobi Olorunsola University of Arkansas at Fayetteville 9 shared publications Hryhorii Stanchu University of Arkansas at Fayetteville 8 shared publications Shui-Qing Yu University of Arkansas at Fayetteville 6 shared publications Emmanuel Wangila University of Arkansas at Fayetteville 6 shared publications Serhii Kryvyi University of Arkansas at Fayetteville 6 shared publications Calbi Gunder University of Arkansas at Fayetteville 5 shared publications

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