Wei Du Source Confirmed
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Associate Professor
University of Arkansas at Fayetteville
faculty
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Biography and Research Information
OverviewAI-generated summary
Wei Du's research program focuses on the development and application of semiconductor materials, particularly Germanium-Tin (GeSn) alloys, for advanced photonic and optoelectronic devices. His work investigates the growth of pseudomorphic GeSn alloys with high tin compositions and explores their potential for mid-infrared (MIR) applications, including the development of electrically injected GeSn lasers operating at wavelengths up to 2.7 μm. Du has published research on SiGeSn quantum wells for integrated photonics circuits and the enhanced carrier collection efficiency of GeSn single quantum wells for all-group-IV photonics.
His federally funded research includes two NSF grants totaling over $571,000. One grant supports the development of semiconductor lasers and passive devices on a sapphire platform for integrated microwave photonics. The second grant focuses on SiGeSn-based heterostructures for intersubband photonic materials. These projects underscore his commitment to advancing semiconductor technologies for integrated systems.
Du collaborates extensively with researchers at the University of Arkansas at Fayetteville, including Shui-Qing Yu, Hryhorii Stanchu, Solomon Ojo, and Sylvester Amoah, with whom he shares numerous publications. His scholarly output is substantial, with 181 total publications and a citation count of 3,548, reflecting a highly cited researcher status. He maintains an active lab website to disseminate his work.
Metrics
- h-index: 31
- Publications: 181
- Citations: 3,548
Selected Publications
- High-quality GeSn grown in foundry mode via chemical vapor deposition enabling lasing up to 235 K (2025) DOI
- Complementary metal-oxide-semiconductor monolithic germanium tin short-wave infrared focal plane array (2025) DOI
- X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping (2025) DOI
- Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect (2025) DOI
- Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025) DOI
- <i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited] (2025) DOI
- Editorial: SiGeSn Infrared Photonics and Quantum Electronics (2025) DOI
- High‐Detectivity GeSn Mid‐Infrared Photodetectors for Sensitive Infrared Spectroscopy (2024) DOI
- Development of All Group IV SiGeSn Mid Infrared Semiconductor Laser (2024) DOI
- Challenges for Room Temperature Electrically Injected GeSn Semiconductor Lasers (2024) DOI
- Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection (2024) DOI
- Development of GeSn epitaxial films with strong direct bandgap luminescence in the mid-wave infrared region using a commercial chemical vapor deposition reactor (2024) DOI
- Modeling Study of Si3N4 Waveguides on a Sapphire Platform for Photonic Integration Applications (2024) DOI
- Feasibility Study of Photonic Integrated Circuits on Sapphire Platform (2024) DOI
- Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K (2024) DOI
Federal Grants 2 $571,464 total
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