Hryhorii Stanchu Source Confirmed

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Ph.D. student, Research assistant

University of Arkansas at Fayetteville

grad_student

13 h-index 69 pubs 435 cited

Research Areas

Semiconductor materials and devices Photonic and Optical Devices Advancements in Semiconductor Devices and Circuit Design Metal and Thin Film Mechanics Semiconductor Quantum Structures and Devices

Links

ORCID Lab Website Research Group

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OverviewAI-generated summary

Hryhorii Stanchu's research focuses on the development and characterization of group-IV semiconductor materials, particularly germanium-tin (GeSn) alloys, for optoelectronic applications. His work investigates the correlation between dislocation generation, strain relief, and tin outdiffusion in thermally annealed GeSn epilayers. Stanchu has also explored the potential of SiGeSn quantum wells for integrated photonics on silicon platforms and reviewed their use in infrared optoelectronics. His publications include studies on coherent-interface-induced strain modeling and the optical and structural properties of GeSn/SiGeSn multiple quantum wells. He has contributed to research on electrically injected mid-infrared GeSn lasers operating at cryogenic temperatures and dual-wavelength emission from SiGeSn mid-IR lasers. Stanchu has also examined the impact of annealing on the photoluminescence of GeSn alloys and the carrier collection efficiency of GeSn single quantum wells for all-group-IV photonics.

Metrics

  • h-index: 13
  • Publications: 69
  • Citations: 435

Selected Publications

  • GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy (2026) DOI
  • Effects of short- and long-range disorder in the photoluminescence of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub> <mml:mi>GaAs</mml:mi> <mml:mrow> <mml:mn>1</mml:mn> <mml:mo>−</mml:mo> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> <mml:msub> <mml:mi>Sb</mml:mi> <mml:mi>x</mml:mi> </mml:msub> <mml:mo>/</mml:mo> <mml:mi>GaAs</mml:mi> </mml:mrow> </mml:math> quantum wells (2025) DOI
  • High-quality GeSn grown in foundry mode via chemical vapor deposition enabling lasing up to 235 K (2025) DOI
  • X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping (2025) DOI
  • Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect (2025) DOI
  • Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025) DOI
  • Optical spin polarization by coherent magnetoabsorption generation (2025) DOI
  • <i>In-situ</i> real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited] (2025) DOI
  • Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K (2025) DOI
  • Development of All Group IV SiGeSn Mid Infrared Semiconductor Laser (2024) DOI
  • Ion Implantation Damage Recovery in GeSn Thin Films (2024) DOI
  • Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K (2024) DOI
  • Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications (2024) DOI
  • Epitaxial growth and characterization of GaAs (111) on 4H-SiC (2024) DOI
  • The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire (2024) DOI

Collaborators

Researchers in the database who share publications

Fernando Maia de Oliveira University of Arkansas at Fayetteville 21 shared publications Yuriy I. Mazur University of Arkansas at Fayetteville 20 shared publications Shui-Qing Yu University of Arkansas at Fayetteville 20 shared publications Wei Du University of Arkansas at Fayetteville 18 shared publications Oluwatobi Olorunsola University of Arkansas at Fayetteville 17 shared publications Sudip Acharya University of Arkansas at Fayetteville 16 shared publications Solomon Ojo University of Arkansas at Fayetteville 13 shared publications Abdulla Said University of Arkansas at Fayetteville 10 shared publications

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