Yiyin Zhou Source Confirmed

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Research Assistant

University of Arkansas at Fayetteville

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18 h-index 74 pubs 1,805 cited

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Biography and Research Information

OverviewAI-generated summary

Yiyin Zhou's research focuses on the development and investigation of semiconductor lasers, particularly those based on Germanium-Tin (GeSn) alloys. Their work has explored electrically injected GeSn lasers with emission wavelengths extending into the mid-infrared region, with recent publications demonstrating peak wavelengths up to 2.7 μm. Zhou has studied dual-wavelength emission in all-group-IV SiGeSn mid-IR lasers and examined the critical optical confinement factor for GeSn-based multiple quantum well lasers. Further investigations include the impact of cap layers on GeSn multiple quantum well laser performance and the characteristics of SiGeSn/GeSn/SiGeSn single quantum wells for enhanced emission.

Zhou's research also includes work on silicon-based electrically injected GeSn lasers, with publications detailing operation at temperatures up to 135 K. Their scholarship metrics include an h-index of 18, with 74 total publications and 1,805 total citations. Zhou has received federal funding from the NSF for the I-Corps program, specifically for research on "Microheater Array Powder Sintering Technology for Additive Manufacturing," a project for which they served as PI and received $50,000. Key collaborators include Wei Du, Solomon Ojo, Shui-Qing Yu, and Sylvester Amoah, all from the University of Arkansas at Fayetteville, with whom Zhou has co-authored multiple publications.

Metrics

  • h-index: 18
  • Publications: 74
  • Citations: 1,805

Selected Publications

  • Electrically Injected GeSn Laser Operating up to 135 K (2024) DOI
  • Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission (2023) DOI
  • Investigation of the cap layer for improved GeSn multiple quantum well laser performance (2023) DOI
  • Study of critical optical confinement factor for GeSn-based multiple quantum well lasers (2022) DOI
  • Silicon-based electrically injected GeSn lasers (2022) DOI
  • Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission (2021) DOI
  • Electrically injected GeSn lasers with peak wavelength up to 2.7  μm (2021) DOI
  • Electrically Injected GeSn Laser on Si Operating up to 110K (2021) DOI

Federal Grants 1 $50,000 total

Collaborators

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