Md Helal Uddin Maruf Source Confirmed
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Researcher
University of Arkansas at Fayetteville
faculty
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Biography and Research Information
OverviewAI-generated summary
Md Helal Uddin Maruf's research centers on the modeling and simulation of semiconductor devices, with a particular focus on Indium Gallium Nitride (InGaN) solar cells. His work investigates the impact of various material properties, such as grading and strain, on device performance. Publications include studies on Λ-graded and double graded InGaN solar cell structures, examining temperature dependence and comparing strained and relaxed features. He has also explored the optical properties of periodic InGaN graded structures and the efficiency of InGaN p-n-p-n homojunction solar cells. Beyond solar cells, Maruf has contributed to research on controlling the size and density of Indium Nitride (InN) quantum dots formed on sapphire substrates using droplet epitaxy. He has also worked on the design and characterization of high-temperature, optically isolated half-bridge modules. Maruf has a history of collaboration with researchers at the University of Arkansas at Fayetteville, including Morgan E. Ware, Rohith Allaparthi, and Reem Alhelais.
Metrics
- h-index: 4
- Publications: 12
- Citations: 138
Selected Publications
- Investigating the efficiency of InGaN p-n-p-n homojunction solar cells (2025) DOI
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation (2024) DOI
- Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy (2023) DOI
- Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features (2022) DOI
- Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features (2022) DOI
- Study of simulations of double graded InGaN solar cell structures (2022) DOI
- Effects of numbers of wells on optical properties of periodic InGaN graded structure (2021) DOI
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