Sudharsan Chinnaiyan Source Confirmed
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Graduate Research Assistant
University of Arkansas at Fayetteville
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Biography and Research Information
OverviewAI-generated summary
Sudharsan Chinnaiyan's research focuses on the development and characterization of advanced power modules, particularly those utilizing silicon carbide (SiC) technology. His work has explored methods for enhancing the performance, reliability, and recyclability of these modules. This includes investigating substrate-less packaging for improved recyclability and employing stacking DBC substrates for electromagnetic interference (EMI) mitigation in high-voltage applications.
Chinnaiyan has also investigated the integration of cooling solutions and gate drivers within power modules. Specific projects include the demonstration of wire bondless SiC power modules with integrated LTCC jet impingement coolers and the development of high-temperature optocouplers and isolated gate drivers for demanding operational environments. His research extends to the design and characterization of low-inductance full SiC power modules and optically isolated half-bridge modules suitable for high-temperature operation up to 250°C.
Metrics
- h-index: 5
- Publications: 14
- Citations: 86
Selected Publications
- A Simplified Gate Driver Architecture for Achieving Fast Switching in Medium-Voltage SiC Power Modules (2025) DOI
- Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers (2025) DOI
- A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward (2025) DOI
- Substrate-Less Power Semiconductor Packaging for the Potential of Recyclability (2025) DOI
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation (2024) DOI
- Multi-tier Cooling Solution for 10 kV SiC MOSFET Power Module Featuring Stacked Substrates (2024) DOI
- Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver (2024) DOI
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules (2023) DOI
- 3.3 kV Low-Inductance Full SiC Power Module (2023) DOI
- High-Temperature (250°C) SiC Power Module Integrated with LTCC-Based Isolated Gate Driver (2023) DOI
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules (2022) DOI
- Demonstration of Wire Bondless Silicon Carbide Power Module with Integrated LTCC Jet Impingement Cooler (2022) DOI
- EMI Mitigation with Stacking DBC Substrate for High Voltage Power Module (2022) DOI
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