Zhong Chen Source Confirmed

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Associate Prof./Supervisor

University of Arkansas at Fayetteville

faculty

16 h-index 93 pubs 754 cited

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Biography and Research Information

OverviewAI-generated summary

Zhong Chen is an Associate Professor at the University of Arkansas at Fayetteville. His research group focuses on plant genomics, molecular biology, and bioinformatics. Chen's recent work includes comprehensive analyses of transcription factor gene families, such as R2R3-MYB, in *Populus trichocarpa*, investigating their roles in abiotic stress responses and developmental processes. He has also contributed to understanding the trehalose-6-phosphate synthase and phosphatase gene families in *Populus*. His publications extend to the characterization of mitochondrial genomes in industrial tree species like *Sapindus mukorossi*, alongside detailed metabolome and transcriptome analyses to elucidate biosynthetic pathways of compounds such as triterpenoid saponins.

Beyond plant sciences, Chen has been involved in research on semiconductor devices, specifically SiC MOSFETs, including methods for online junction temperature monitoring. He also contributed to an analysis of wind and solar power complementarity in China. Chen's h-index is 16, with 93 total publications and 754 citations. He has collaborated extensively with researchers at the University of Arkansas at Fayetteville, including Pengyu Lai, Salahaldein Ahmed, Hui Wang, and Sudharsan Chinnaiyan, with whom he shares numerous publications.

Metrics

  • h-index: 16
  • Publications: 93
  • Citations: 754

Selected Publications

  • Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers (2025) DOI
  • Use of E-Beam Lithography to Optimize Lithography Patterning on SiC Wafers (2025) DOI
  • Design Optimizations of Micrometer SiC CMOS Devices for High-Temperature IC Applications (2025) DOI
  • A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward (2025) DOI
  • Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures (2024) DOI
  • Electrical Safe Operating Area and Latent Damage of SiC Low-Voltage nMOS Under TLP and VF-TLP Stresses (2024) DOI
  • Dynamic Analytical Switching Loss Model of SiC MOSFET Considering Threshold Voltage Instability (2024) DOI
  • Epitaxial growth and characterization of GaAs (111) on 4H-SiC (2024) DOI
  • Investigation on Gate Oxide Degradation of SiC MOSFET in Switching Operation (2024) DOI
  • A review of silicon carbide CMOS technology for harsh environments (2024) DOI
  • Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor (2024) DOI
  • Research on electronic and optical properties of pristine and Ag/Au/Cu-doped graphene/MoS2 heterostructures (2024) DOI
  • Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver (2024) DOI
  • Fabrication Process Optimization of A High- Power Double-Sided Cooled SiC Power Module (2023) DOI
  • Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules (2023) DOI

Federal Grants 1 $17,874,768 total

NSF Co-PI

Mid-Scale RI-1 (M1:IP): Implementation of a National Silicon Carbide Research Fabrication Facility

EPSCoR Co-Funding, CSCS: Circuits and Systems for, SSA-Special Studies & Analysis, Mid-scale RI - Track 1 $17,874,768

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