Yuxiang Chen Source Confirmed

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Research Assistant Professor

University of Arkansas at Fayetteville

faculty

14 h-index 48 pubs 761 cited

Research Areas

Advancements in Semiconductor Devices and Circuit Design Semiconductor materials and devices GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies Multilevel Inverters and Converters

Links

ORCID Lab Website

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OverviewAI-generated summary

Yuxiang Chen's research focuses on power device modeling and high-density power module packaging. She has investigated various aspects of semiconductor device design and fabrication, including optimizing electric field distribution and minimizing parasitic inductance in high-voltage modules. Her work includes the design and fabrication of power modules utilizing Silicon Carbide (SiC) and Gallium Nitride (GaN) technologies.

Chen has published research on advanced packaging techniques for power semiconductors, such as substrate-less designs for improved recyclability and the integration of cooling systems. Her publications also address gate driver integration and electromagnetic interference (EMI) mitigation in power module architectures. She has contributed to the understanding of high-density power module packaging through tutorials and feasibility studies.

Her academic background includes degrees in electrical engineering and automation, and power electronics and power drives. She holds a Ph.D. in electrical engineering from Zhejiang University. Chen's current research is conducted at the University of Arkansas, Fayetteville. Her scholarly output is reflected in an h-index of 14 and over 760 citations across her 48 publications.

Metrics

  • h-index: 14
  • Publications: 48
  • Citations: 761

Selected Publications

  • Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module (2025) DOI
  • Compact Busbar Design Strategy for a 100 kW, 300 kHz Dual Active Bridge Converter Topology (2025) DOI
  • Heterogeneously Integrated 3.3 kV SiC MOSFET Power Module with Multi-layer Substrate and Built-in Gate Drivers (2025) DOI
  • <i>(Invited)</i> High-Temperature Reliability of Ti-Based Ohmic Contacts to SiC (2025) DOI
  • Evaluation of Heat Spreading Technologies Within Double-Side-Cooled Power Modules (2025) DOI
  • Design Optimizations of Micrometer SiC CMOS Devices for High-Temperature IC Applications (2025) DOI
  • Substrate-Less Power Semiconductor Packaging for the Potential of Recyclability (2025) DOI
  • Multiobjective Optimization and Enhanced Design of an Ω-Shaped Current Sensor for WBG Devices (2025) DOI
  • Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation (2024) DOI
  • Multi-tier Cooling Solution for 10 kV SiC MOSFET Power Module Featuring Stacked Substrates (2024) DOI
  • Optimal Point Derive for SiC MOSFET Switching Ringing Damping with Active Gate Driver Control (2024) DOI
  • Evaluation of the Bonding Strength of Die Attachment Techniques for Gallium Oxide Power Devices (2024) DOI
  • A 10 kV SiC MOSFET Power Module With Optimized System Interface and Electric Field Distribution (2024) DOI
  • Toward Direct Cooling in High Voltage Power Electronics: Dielectric Fluid Microchannel Embedded Source Bussing Terminal (2024) DOI
  • A 4.16kV/750kVA MV Power Conditioning System for Distribution System Applications (2023) DOI

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