Hui Wang Source Confirmed

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Researcher

University of Arkansas at Fayetteville

faculty

15 h-index 82 pubs 966 cited

Research Areas

Silicon Carbide Semiconductor Technologies Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design Photonic and Optical Devices

Links

ORCID Lab Website

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OverviewAI-generated summary

Hui Wang's research focuses on semiconductor materials and devices, with a particular emphasis on silicon carbide (SiC) technology. Her work investigates the characterization and optimization of SiC MOSFETs for harsh environments and high-temperature applications. Wang has also explored advanced fabrication techniques for flash memory cells and investigated flexible terahertz beam manipulation using digital coding metasurfaces. Her research network includes frequent collaborations with colleagues at the University of Arkansas at Fayetteville, such as Pengyu Lai and Zhong Chen.

With a publication record of 82 papers and 966 citations, Wang has an h-index of 15. Her recent publications include work on paving the way for SiC pilot lines, reviewing SiC CMOS technology, and characterizing gate-oxide degradation in SiC MOSFETs. Other research areas include modeling for scheduling problems and the development of area-efficient SCR devices for ESD protection.

Metrics

  • h-index: 15
  • Publications: 82
  • Citations: 966

Selected Publications

  • <i>(Invited)</i> High-Temperature Reliability of Ti-Based Ohmic Contacts to SiC (2025) DOI
  • Design Optimizations of Micrometer SiC CMOS Devices for High-Temperature IC Applications (2025) DOI
  • Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures (2024) DOI
  • Electrical Safe Operating Area and Latent Damage of SiC Low-Voltage nMOS Under TLP and VF-TLP Stresses (2024) DOI
  • A review of silicon carbide CMOS technology for harsh environments (2024) DOI
  • Current Injection Effect on ESD Behaviors of the Parasitic Bipolar Transistors inside P+/N-well diode (2023) DOI
  • Characterization of Gate-Oxide Degradation Location for SiC MOSFETs Based on the Split <i>C–V</i> Method Under Bias Temperature Instability Conditions (2023) DOI
  • Area-Efficient Silicon Carbide SCR Device for On-Chip ESD Protection (2022) DOI
  • Area-efficient dual-diode with optimized parasitic bipolar structure for rail-based ESD protections (2021) DOI

Collaborators

Researchers in the database who share publications

Pengyu Lai University of Arkansas at Fayetteville 8 shared publications Zhong Chen University of Arkansas at Fayetteville 7 shared publications K. Asif Faruque University of Arkansas at Fayetteville 2 shared publications K.Y. Chen University of Arkansas at Fayetteville 2 shared publications H. Alan Mantooth University of Arkansas at Fayetteville 1 shared publication Abu Shahir Md Khalid Hasan University of Arkansas at Fayetteville 1 shared publication Zhuowen Feng University of Arkansas at Fayetteville 1 shared publication Nur-E-Afra Anika University of Arkansas at Fayetteville 1 shared publication

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