Pengyu Lai Source Confirmed
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Researcher
University of Arkansas at Fayetteville
faculty
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Biography and Research Information
OverviewAI-generated summary
Pengyu Lai's research focuses on the development and characterization of high-temperature semiconductor devices and integrated circuits, particularly those utilizing silicon carbide (SiC) technology. His work investigates components designed for operation in harsh environments, such as optocouplers and gate drivers integrated into high-density power modules. Lai has explored online junction temperature monitoring correction methods for SiC MOSFETs and analyzed the high-temperature performance of optical coupling using LEDs for integrated power modules. His publications also address the integration of components like LTCC-based current sensors and optocouplers for high-temperature applications, contributing to advancements in power electronics for demanding conditions. Lai collaborates with several researchers at the University of Arkansas at Fayetteville, including Zhong Chen, Hui Wang, Salahaldein Ahmed, and Sudharsan Chinnaiyan, with whom he shares multiple publications.
Metrics
- h-index: 9
- Publications: 30
- Citations: 230
Selected Publications
- <i>(Invited)</i> High-Temperature Reliability of Ti-Based Ohmic Contacts to SiC (2025) DOI
- Design Optimizations of Micrometer SiC CMOS Devices for High-Temperature IC Applications (2025) DOI
- Design and Validation of a 100 kHz Inner-Paralleled Si+SiC Hybrid Multilevel Converter for Medium-Voltage Electric Traction Drives (2025) DOI
- A 200 <sup>∘</sup>C SiC Phase-Leg Power Module With Integrated Gate Drivers: Development, Performance Assessment, and Path Forward (2025) DOI
- Design and Characterization of 1.2 kV Optically Isolated Half-Bridge Modules for High Temperature Operation (2024) DOI
- Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures (2024) DOI
- Electrical Safe Operating Area and Latent Damage of SiC Low-Voltage nMOS Under TLP and VF-TLP Stresses (2024) DOI
- A review of silicon carbide CMOS technology for harsh environments (2024) DOI
- Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver (2024) DOI
- Demonstration and Optimization of a 250°C LTCC-based Gate Driver for High Density, High-Temperature Power Modules (2023) DOI
- A Medium-Voltage Multilevel Hybrid Converter Using 3.3kV Silicon Carbide MOSFETs and Silicon IGBT Modules (2023) DOI
- High-Temperature (250°C) SiC Power Module Integrated with LTCC-Based Isolated Gate Driver (2023) DOI
- Current Injection Effect on ESD Behaviors of the Parasitic Bipolar Transistors inside P+/N-well diode (2023) DOI
- Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules (2022) DOI
- Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications (2022) DOI
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