Aida Sheibani
Researcher
University of Arkansas at Fayetteville
unknown
Research Areas
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Biography and Research Information
OverviewAI-generated summary
Aida Sheibani's research focuses on the epitaxial growth of semiconductor thin films, investigating methods for creating high-quality materials on various substrates. Her work includes the development of algorithms for controlling the composition and structure of materials like GeSn on GaAs, and the single-step growth of GaAs on sapphire. She also studies the interface-driven growth modes of 2D materials, such as GaSe, on 3D substrates. Her investigations extend to understanding the impact of crystal structure on material properties, as seen in her work on the thermoelectric properties of GeTe. Sheibani collaborates with researchers Yuriy I. Mazur, Serhii Kryvyi, Calbi Gunder, and Fernando Maia de Oliveira, all from the University of Arkansas at Fayetteville, with whom she has co-authored multiple publications.
Metrics
- h-index: 1
- Publications: 8
- Citations: 5
Selected Publications
- High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam (2024) DOI
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy (2024) DOI
- The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire (2024) DOI
- Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy (2023) DOI
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