Calbi Gunder Source Confirmed

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Researcher

University of Arkansas at Fayetteville

faculty

2 h-index 11 pubs 30 cited

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Biography and Research Information

OverviewAI-generated summary

Calbi Gunder's research focuses on the epitaxial growth of semiconductor thin films, particularly germanium (Ge) and germanium-tin (GeSn) alloys, using molecular beam epitaxy (MBE). Their work investigates the growth of these materials on various substrates, including sapphire and gallium arsenide (GaAs). Recent publications detail the successful growth of single crystalline Ge thin films on c-plane sapphire and the development of Ge and GeSn on GaAs substrates. Gunder has also explored algorithms for achieving linearly graded compositions in GeSn on GaAs. Collaborations include extensive work with Yuriy I. Mazur and Fernando Maia de Oliveira at the University of Arkansas at Fayetteville, with whom Gunder has shared multiple publications. Gunder's scholarly output includes 11 publications and 30 citations, with an h-index of 2.

Metrics

  • h-index: 2
  • Publications: 11
  • Citations: 30

Selected Publications

  • High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam (2024) DOI
  • Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy (2024) DOI
  • The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire (2024) DOI
  • The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy (2024) DOI
  • Epitaxial Growth of Ge0.91sn0.09 on Gaas (001) Substrate by Molecular Beam Epitaxy (2023) DOI
  • Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy (2023) DOI
  • Title: Growth of germanium thin film on sapphire by molecular beam epitaxy (2023) DOI
  • Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy (2023) DOI
  • Single crystalline Ge thin film growth on <i>c</i>-plane sapphire substrates by molecular beam epitaxy (MBE) (2022) DOI

Collaborators

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