Fernando Maia de Oliveira Source Confirmed

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Professor Adjunto

University of Arkansas at Fayetteville

faculty

10 h-index 60 pubs 373 cited

Is this your profile? Verify and claim your profile

Biography and Research Information

OverviewAI-generated summary

Fernando Maia de Oliveira's research focuses on the material science of semiconductor heterostructures, particularly germanium-tin (GeSn) and gallium nitride (GaN) based systems. His work investigates the fundamental relationships between material growth processes, structural properties, and electronic behavior. Recent publications explore the quantitative correlation between dislocation generation, strain relief, and tin outdiffusion in thermally annealed GeSn epilayers, as well as the development of new modeling approaches for Raman shifts in materials with large lattice mismatches.

Oliveira has also studied the growth of Ge and direct bandgap GeSn on gallium arsenide (GaAs) substrates using molecular beam epitaxy. His research extends to the formation mechanisms of GeSn nanowires and their electric-field-induced switching properties. Additionally, he has investigated the thermal stability of magnetic field sensors based on GaN and the material quality of GaAs grown on sapphire for room-temperature photoluminescence. He collaborates extensively with researchers at the University of Arkansas at Fayetteville, including Yuriy I. Mazur, Hryhorii Stanchu, Shui-Qing Yu, and Oluwatobi Olorunsola.

Metrics

  • h-index: 10
  • Publications: 60
  • Citations: 373

Selected Publications

  • Durable Low-Friction Graphite Coatings Enabled by a Polydopamine Adhesive Underlayer (2025) DOI
  • X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping (2025) DOI
  • Tip-induced nanoscale engineering of surface potential and conductivity in GeSn alloys (2025) DOI
  • Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025) DOI
  • Temperature dependent optical properties of ultrathin InAs quantum well (2024) DOI
  • Surface Roughness Measurement of Functionalized CVD Graphene and Hexagonal Boron Nitride Heterostructures Using Atomic Force Microscopy (2024) DOI
  • High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam (2024) DOI
  • Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors (2024) DOI
  • Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications (2024) DOI
  • Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer (2024) DOI
  • Composite nanofilms of graphene and nickel: Fabrication, cw linear and nonlinear optical properties (2024) DOI
  • Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy (2024) DOI
  • Epitaxial growth and characterization of GaAs (111) on 4H-SiC (2024) DOI
  • The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire (2024) DOI
  • Spatially correlated stress-photoluminescence evolution in GaN/AlN multi-quantum wells (2024) DOI

Collaborators

Researchers in the database who share publications

Similar Researchers

Based on overlapping research topics