Dinesh Baral Source Confirmed

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Postdoc Fellow

University of Arkansas at Fayetteville

postdoc

4 h-index 17 pubs 74 cited

Research Areas

GeSn Alloys and Heterostructures Semiconductor materials and devices Molecular Beam Epitaxy Growth Photoluminescence Spectroscopy Defect Characterization in Semiconductors Advancements in Semiconductor Devices and Circuit Design GaN-based semiconductor devices and materials

Links

ORCID Research Group

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OverviewAI-generated summary

Dinesh Baral's research focuses on the growth and characterization of semiconductor materials, particularly germanium-tin (GeSn) alloys and heterostructures. His work involves molecular beam epitaxy (MBE) techniques to fabricate strained GeSn/Ge multiple quantum well structures and GeSn alloys with high tin content. Baral investigates the optical properties of these materials, including photoluminescence emissions and the neutralization of optical defects to achieve direct bandgap properties in GeSn grown on silicon substrates. He also studies the strain relaxation and defect density evolution in MBE-grown GeSn films. Additionally, his research has explored the physical properties of materials like AlN/GaN heterostructures for micro-Hall effect sensors and the coexistence of magnetic and paramagnetic properties in Fe-doped WTe2. Baral has co-authored multiple publications with collaborators at the University of Arkansas at Fayetteville, including Oluwatobi Olorunsola, Fernando Maia de Oliveira, Hryhorii Stanchu, and Diandian Zhang.

Metrics

  • h-index: 4
  • Publications: 17
  • Citations: 74

Selected Publications

  • GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy (2026) DOI
  • Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn (2025) DOI
  • Strain Relaxation and Defect Density Evolution with Thickness in Mbe Grown Ge0.85sn0.15 on Ge(001) (2025) DOI
  • Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors (2024) DOI
  • Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer (2024) DOI
  • Possible coexistence of magnetism and paramagnetic singularity in lightly Fe-doped <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>WTe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> (2024) DOI
  • Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor (2024) DOI

Collaborators

Researchers in the database who share publications

Oluwatobi Olorunsola University of Arkansas at Fayetteville 8 shared publications Fernando Maia de Oliveira University of Arkansas at Fayetteville 6 shared publications Hryhorii Stanchu University of Arkansas at Fayetteville 6 shared publications Diandian Zhang University of Arkansas at Fayetteville 6 shared publications Yuriy I. Mazur University of Arkansas at Fayetteville 5 shared publications Mohammad Zamani‐Alavijeh University of Arkansas at Fayetteville 5 shared publications Serhii Kryvyi University of Arkansas at Fayetteville 4 shared publications Satish Shetty University of Arkansas at Fayetteville 3 shared publications

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